description: the central semiconductor CMXD2004S consists of dual, in-series pairs of high voltage silicon switching diodes, manufactured in a supermini? sot-26 surface mount package, and designed for high voltage switching applications. this device can be configured as a 1200v switching diode, or as a bridge rectifier. see optional mounting pad configurations on following page. marking code: cx04s maximum ratings (t a =25c unless otherwise noted) symbol units continuous reverse voltage v r 240 v peak repetitive reverse voltage v rrm 300 v peak repetitive reverse current i o 200 ma continuous forward current i f 225 ma peak repetitive forward current i frm 625 ma forward surge current, tp=1 s i fsm 4.0 a forward surge current, tp=1 s i fsm 1.0 a power dissipation p d 350 mw operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics per diode (t a =25c unless otherwise noted) symbol test conditions min max unit i r v r =240v 100 na i r v r =240v, t a =150c 100 a bv r i r =100 a 300 v v f i f =100ma 1.0 v c t v r =0, f=1 mhz 5.0 pf t rr i f =i r =30ma, rec. to 3.0ma, r l =100 ? 50 ns CMXD2004S supermini tm dual, in-series surface mount high voltage switching diodes sot-26 case central semiconductor corp. tm r0 (07-november 2002)
lead code 1) anode d1 2) cathode d1, anode d3 3) cathode d3 4) cathode d4 5) anode d4, cathode d2 6) anode d2 central semiconductor corp. tm sot-26 case - mechanical outline CMXD2004S supermini tm dual, in-series surface mount high voltage switching diodes pin configuration r0 (07-november 2002) optional mounting pad layouts (dimensions in mm) marking code: cx04s for bridge configuration for 1200v series configuration
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